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Статьи в журналах
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- 2016 Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
- Korolev D.S., Mikhaylov A.N., Belov A.I., Vasiliev V.K., Guseinov D.V., Okulich E.V., Shemukhin A.A., Surodin S.I., Nikolitchev D.E., Nezhdanov A.V., Pirogov A.V., Pavlov D.A., Tetelbaum D.I.
- в журнале Semiconductors, издательство Springer (New York), том 50, № 2, с. 271-275 DOI