Аннотация:The applications of a rotating magnetic field (RMF) in semiconductor crystals' growth technologyfrom a melt by the Czochralski method (CzM) are discussed, including the use of the known data of physical modeling of electrically conductive KOH solution flows in a cylindrical crucible under RMF to verify the results of this work. A mathematical model of hydrodynamic processes is considered in relation to silicon single crystal growth with a diameter of 100 mm on a Redmet-30 furnace equipped with an RMF magnet. The test results of the calculated azimuth velocity profile with the measured data in ф KOH solution are presented.The results of parametric studies of the stability of melt flows depending on the frequency and magnitude of RMF induction are summarized in a stability diagram.
