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Статьи в журналах
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- 2017 Single Event Upset rate determination for 65 nm SRAM bit-cell in LEO radiation environments
- Muhammad Sajid, Chechenin N.G., Frank Sill Torres, Usman Ali Gulzari, Muhammad Usman Butt, Zhu Ming, Khan E.U.
- в журнале Microelectronics and Reliability, издательство Elsevier BV (Netherlands), том 78, с. 11-16 DOI