–
Статьи в сборниках
-
- 2013 Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>)
- Cheng Ran, Liu Bin, Guo Pengfei, Yang Yue, Zhou Qian, Gong Xiao, Dong Yuan, Tong Yi, Bourdelle Konstantin, Daval Nicolas, Delprat Daniel, Nguyen Bich-Yen, Augendre Emmanuel, Yeo Yee-Chia
- в сборнике 2013 IEEE International Electron Devices Meeting, место издания IEEE DOI