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Статьи в журналах
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- 2021 SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From −200 °C to +300 °C)
- Petrosyants Konstantin O., Sambursky Lev M., Kozhukhov Maxim V., Ismail-Zade Mamed R., Kharitonov Igor A., Li Bo
- в журнале IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, издательство Institute of Electrical and Electronics Engineers (Piscataway, NJ, United States), том 40, № 4, с. 708-722 DOI