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Тезисы докладов
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- 2007 Noise characteristics of a single-electron transistor based on highly doped silicon-on-insulator
- Krupenin V.A., Presnov D.E., Vlasenko V.S., Afanasiev N.N., Erkhov D.N.
- в сборнике Abstracts of Invited Lectures and Contributed Papers of 15th Int. Symposium - Nanostructures: Physics and Technology, место издания Ioffe Novosibirsk, Russia, 25-29 June, тезисы, с. 149-150
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- 2006 Single-electron transistor based on highly doped silicon-on-insulator
- Krupenin V.A., Presnov D.E., Vlasenko V.S., Afanasiev N.N., Erkhov D.N.
- в сборнике Abstracts of Invited Lectures and Contributed Papers of 14th Int. Symposium - Nanostructures: Physics and Technology, место издания Ioffe St.Petersburg, Russia, 26-30 June, тезисы, с. 236-237
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- 2005 Single-electron transistor from highly doped silicon-on-insulator
- Presnov D.E., Krupenin V.A., Afanasiev N.N., Erkhov D.N.
- в сборнике International Conference “Micro- and nanoelectronics – 2005” (ICMNE-2005), место издания Zvenigorod, Moscow region, Russia, 3-7 October, тезисы, с. P2-06