Optical and transport properties of short-period InAs/GaAs superlattices near quantum dot formation

Kulbachinskii, V.A.; Lunin, R.A.; Rogozin, V.A.; Mokerov, V.G.; Fedorov, Y.V.; Khabarov, Y.V.; de Visser, A.

Статья опубликована в высокорейтинговом журнале

Информация о цитировании статьи получена из Web of Science, Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 9 апреля 2015 г.

Авторы: Kulbachinskii V.A., Lunin R.A., Rogozin V.A., Mokerov V.G., Fedorov Y.V., Khabarov Y.V., de Visser A.
Журнал: Semiconductor Science and Technology
Том: 17
Номер: 9
Год издания: 2002
Издательство: IOP Publishing
Местоположение издательства: [Bristol, UK], England
Первая страница: 947
Последняя страница: 951
DOI: 10.1088/0268-1242/17/9/308
Аннотация: We have investigated the optical and transport properties of short-period superlattices of InAs/GaAs, grown by molecular beam epitaxy, with different numbers of periods (3 less than or equal to N less than or equal to 24) and a total thickness of 14 nm. Band structure calculations show that these superlattices represent a quantum well with average composition In0.16Ga0.84As. The electron wavefunctions are only slightly modulated by the superlattice potential as compared to a single quantum well with the same composition, which was grown as a reference sample. The photoluminescence, the resistance, the Shubnikov-de Haas effect and the Hall effect have been measured as a function of the InAs layer thickness Q in the range of 0.33 less than or equal to Q less than or equal to 2.7 monolayers (ML). The electron densities range from 6.8 to 11.5 x 10(11) cm(-2) for Q less than or equal to 2.0 ML. The photoluminescence and magneto-tran sport data show that only one sub-band is occupied. When Q greater than or equal to 2.7 ML, quantum dots are formed and the metallic type of conductivity changes to variable range hopping conductivity.
Добавил в систему: Лунин Роман Анатольевич

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Optical and transport properties of short-period InAs/GaAs superlattices near quantum dot formationстатья

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