Fluorocarbon (C4F8) assisted plasma-enhanced atomic layer etching (PEALE) of SiO2 with high repeatability of cycles in industrial ICP reactor. I. experiment

Lopaev, D.V.; Shibanov, D.R.; Rakhimova, T.V.; Bogdanova, M.A.; Glotov, A.V.; Maslakov, K.I.; Rezvanov, A.A.; Rakhimov, A.T.

Авторы: Lopaev D.V., Shibanov D.R., Rakhimova T.V., Bogdanova M.A., Glotov A.V., Maslakov K.I., Rezvanov A.A., Rakhimov A.T.
Журнал: Journal of Vacuum Science and Technology A
Том: 44
Номер: 2
Год издания: 2026
Издательство: AIP Publishing
Местоположение издательства: United States
Номер статьи: 022607
DOI: 10.1116/6.0005123
Аннотация: Deep understanding of plasma-surface interaction processes largely determines the progress of modern plasma technologies in microelectronics. Creating reliable ultrasmall nanometer-level devices requires precise low-damage processes. This paper investigates the implementation of fluorocarbon (C4F8) assisted plasma-enhanced atomic layer etching (PEALE) of SiO2 in an industrial 200 mm reactor. The “classical” approach to PEALE of SiO2 is used: (i) deposition of a reactive CxFy nm layer and (ii) activation of reactions at the “CxFy–SiO2” interface by Ar+ ions. We added step (iii), removal of reaction products and reactor cleaning with oxygen atoms. The PEALE dynamics of SiO2 is observed using an in situ laser ellipsometer and a set of plasma diagnostics. The surface state during all steps of the PEALE cycle is analyzed using ex situ x-ray photoelectron spectroscopy. It is shown that the defects in the upper SiO2 layer can be generated by using the energetic (∼130 eV) ions for activation and cleaning. Activation of the ∼1–1.5 nm CxFy layer by low-energy (∼50 eV) Ar+ ions mainly promotes reactions at the “CxFy–SiO2” interface without introducing defects into the underlying SiO2 layers, while the surface is essentially fluorinated. The low-damage PEALE process can be implemented by synchronously optimizing the CxFy thickness and Ar+ energy to release ion energy into the CxFy layer. The use of an additional step using O atoms from the Ar/O2 plasma to remove reaction products and fluorocarbon residues allows us to carefully reproduce both the SiO2 state and the reactor surface state, providing well-controlled PEALE of SiO2 with high repeatability
Добавил в систему: Шибанов Даниил Романович

	ИСТИНА	Войти в систему Регистрация
	ИСТИНА ПсковГУ
	Главная Поиск Статистика О проекте Помощь

ИСТИНА

ИСТИНА ПсковГУ

Fluorocarbon (C4F8) assisted plasma-enhanced atomic layer etching (PEALE) of SiO2 with high repeatability of cycles in industrial ICP reactor. I. experimentстатья Исследовательская статья

Прикрепленные файлы