Isosbestic point formation on transverse magnetoresistance curves for strongly correlated quantum matterстатья
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Дата последнего поиска статьи во внешних источниках: 23 января 2026 г.
Аннотация:Features of the formation of isosbestic point (IP) on the curves of transverse magnetoresistance (TMR) were studied for several objects with different transport and magnetic properties, including narrow band semiconductor YbB5.96, heavy fermion compound Ce3Pd20Si6, antiferromagnet NdB6, magnetic Weyl semimetal with field-induced A-phase GdCoC2 and metallic system with isolated Ce impurity Ce0.01La0.99B6. Experimental study has been performed on high quality single crystals and polycrystalline samples at temperatures 1.8–300 K in magnetic fields up to 82 kOe. Along with usual IP (Tiso) we discovered a new effect, when Tiso turns out to be very close to the position of the inversion point (Tinv), which separates positive and negative regimes of TMR. The phenomenon, when two characteristic temperatures of different nature practically coincide, is very unusual and may be classified as a single temperature scale (inverse isosbestic point). A general approach, which relates inverse isosbestic point to several competing scattering mechanisms, is suggested and discussed.