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Features of oxygen adsorption on nanocrystalline BiVO4 and InVO4 studied by electric measurements, EPR and DRIFT spectroscopyстатья Исследовательская статья
Информация о цитировании статьи получена из
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 23 января 2026 г.
- Авторы: Marikutsa Artem, Mozharov Yaroslav, Konstantinova Elizaveta, Rumyantseva Marina
- Журнал: Materials Chemistry and Physics
- Том: 350
- Год издания: 2026
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Номер статьи: 131937
- DOI: 10.1016/j.matchemphys.2025.131937
- Аннотация: Bismuth and indium vanadates are n-type semiconductors with a good sensitivity and selectivity to toxic gases. Chemisorbed oxygen plays a crucial role in gas sensitivity of metal oxide semiconductors (MOS), however it was not determined for bismuth and indium vanadates. In this work, an experimental determination of chemisorbed oxygen species on nanocrystalline BiVO4 and InVO4 was performed by electric measurements, EPR and in situ infrared (DRIFT) spectroscopy under variable oxygen partial pressure. It was found that O2 chemisorption on monoclinic sheelite (ms-BiVO4) and tetragonal zircon (tz-BiVO4) polymorphs of bismuth vanadate fits the ionosorption model of oxygen on MOS and results in molecular O2− (at 150–200 °C), and atomic O− (at 200–300 °C) and O2− species at raising temperature. Oxygen vacancies determined by EPR in BiVO4 are believed to be the donor sites for oxygen chemisorption. On the other hand, the results suggest that oxygen binds to partially reduced cations V4+ restoring V–O bonds and forming O− species at the surface of InVO4 at 100–300 °C.
- Добавил в систему: Марикуца Артем Валерьевич
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