Structural Changes in N, P, and Si-Doped Few-Layer Graphite Fragments at Spark Plasma Sintering and Plasma Treatment

Suslova, E.V.; Karimova, M.O.; Maksimov, S.V.; Maslakov, K.I.; Isaikina, O.Y.

Авторы: Suslova E.V., Karimova M.O., Maksimov S.V., Maslakov K.I., Isaikina O.Ya
Журнал: Russian Journal of Physical Chemistry A
Том: 99
Номер: 11
Год издания: 2025
Издательство: Pleiades Publishing, Ltd
Местоположение издательства: Road Town, United Kingdom
Первая страница: 2708
Последняя страница: 2716
DOI: 10.1134/S0036024425702206
Аннотация: Nitrogen, phosphorous, and silicon-doped few-layer graphite fragments (FGFs) are synthesized by pyrolyzing acetonitrile, triphenylphosphine, and tetramethylsilane, using a MgO template. The N, P, and Si-FGFs are consolidated using spark plasma sintering (SPS) at 1100°С and 30 MPa and also treated with the high-frequency induction discharge plasma. The materials are studied using transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. After the SPS treatment, the samples of N, P, and Si-FGFs are transformed into nonuniform materials with complex morphology, containing substantially lower amounts of heteroatoms compared to nonsintered samples. It is shown that the pressure applied during the SPS plays a less significant role as compared to the resistive heating. The latter induces a plasma breakdown, thus facilitating phase transitions. The treatment of N, P, and Si-FGFs with high-frequency induction discharge plasma facilitates their transformation into N-doped bulbous carbon structures (BCSs) ~10 nm in diameter, and amorphous P and Si-doped carbon.
Добавил в систему: Маслаков Константин Игоревич

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Structural Changes in N, P, and Si-Doped Few-Layer Graphite Fragments at Spark Plasma Sintering and Plasma Treatmentстатья

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