|
ИСТИНА |
Войти в систему Регистрация |
ИСТИНА ПсковГУ |
||
Mutual control of critical temperature, residual resistance ratio, stress, and roughness for sputtered Nb filmsстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 4 марта 2026 г.
- Авторы: Zikiy E.V., Stepanov I.A., Bukatin S.V., Baklykov D.A., Teleganov M.I., Krivko E.A., Smirnov N.S., Ryzhikov I.A., Bychkov S.P., Kotenkov S.A., Korshakov N.D., Agafonova J.A., Rodionov I.A.
- Журнал: SURFACES AND INTERFACES
- Том: 72
- Год издания: 2025
- Номер статьи: 107266
- DOI: 10.1016/j.surfin.2025.107266
- Аннотация: Superconducting single quantum logic integrated circuits traditionally exploit magnetron sputtered niobium thin films on silicon oxide substrates. The sputtering depends on multiple process parameters, which dramatically affect mechanical, electrical and cryogenic properties of Nb thin films. In this work, we focus on the comprehensive relationship study between 200-nm Nb film characteristics and their intrinsic stress. It is shown that there is a critical value of the working pressure pcritical at the fixed sputtering power above which stress in the film relaxes whereas the film parameters decrease. Below pcritical one can control intrinsic stress in the wide range from -400 MPa to +600 MPa maintaining low surface roughness (Rq) 0.8 nm, electrical resistivity <20 μΩ×cm, critical superconducting transition temperature above 8.9 K and residual resistance ratio over 6.4. We suggest a modified kinetic model to predict Nb films stress with the linear dependence of stress on the working pressure replaced with an exponential one, which allowed reduction of the average percent approximation error from 20 to 8 %.
- Добавил в систему: Зикий Евгений Владимирович