Аннотация:Ferromagnetic (F)/antiferromagnetic (AF) exchange biased structures are of wide interest due to their use in spintronics devices, such as spin valves based on the giant magnetoresistance effect. In recent years, due to the discovery of the spin Hall effect in metallic AF and spin transfer in some AF, studies of the dynamics of magnetization in two-layer structures of F/AF have been of renewed interest. This work presents the results of studies of magnetization dynamics by the ferromagnetic resonance (FMR) method in structures with a Co layer in contact with IrMn and FeMn layers, which are the most popular and frequently used AF materials in practical applications. The main features of the magnetization dynamics in F/AF samples at low temperatures are a decrease in the resonant field that is inversely proportional to the spin precession frequency and a broadening of the FMR line, which characterizes the damping coefficient. To separate the intrinsic F contribution and the contribution of the F/AF exchange interaction at the interface of the layers to these effects, the results obtained are compared with similar results for the free F layer.
