Место издания:Institute of Atmospheric Optics SB RAS Institute of Atmospheric Optics SB RAS, Tomsk, Russia
Первая страница:37
Последняя страница:37
Аннотация:Chalcogenide vitreous semiconductors (ChVS) have potential for telecommunications andinfrared (IR) polarization optics, being transparent with high refractive index in the near IR range,and possessing possibilities of photostructural transformations and laser-induced periodic surfacestructures (LIPSS) formation with optical anisotropy on their surface.In this work, femtosecond laser pulses (515 nm, 300 fs, fluence 8–270 mJ/cm2, frequency up to2 kHz) were used to produce various LIPSS types on the surface of 1-μm-thick ChVS (As2S3, As2Se3and As50Se50) films. The obtained LIPSS were in the form of one-dimensional gratings with a periodfrom 500 to 170 nm and a depth of up to 100 nm, or hierarchical structures containing two mutuallyorthogonal gratings with different periods. The possibility to control the optical anisotropy of LIPSSformed on the ChVS by changing the number and fluence of the laser pulses is demonstrated: theoptical retardance value in the LIPSS varies from 0 to 30 nm for one layer of ChVS film. Thepossibility of increasing the optical retardance using layer-by-layer deposition of ChVS withsubsequent LIPSS formation on each layer is presented. A correlation is demonstrated between thephotoluminescence intensity of laser-modified As2S3 films and the concentration of defects in the formof homopolar bonds in them, while paramagnetic defects in the form of dangling sulfur bonds areshown to not contribute to the luminescence.The work was supported by the Russian Science Foundation (project N 22-19-00035-P),https://rscf.ru/en/project/22-19-00035/.
