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Spectroscopic properties of thulium-doped tin disulfide synthesized under high pressureстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 1 октября 2025 г.
- Авторы: Usmanov Ilshat I., Nikolaev Sergey N., Ekimov Evgeny A., Shestakov Mikhail V., Zazymkina Daria A., Shiryaev Andrey A., Chernyshev Vladimir V., Krivobok Vladimir S.
- Журнал: APL Materials
- Том: 13
- Номер: 9
- Год издания: 2025
- Издательство: AIP Publishing
- Местоположение издательства: United States
- Номер статьи: 091106
- DOI: 10.1063/5.0284570
- Аннотация: The development of layered semiconductor doping and functionalization techniques is important for van der Waals heterostructure applications. Rare-earth impurities are of interest due to their ability to modify the optical, magnetic, and conductive properties of the semiconductor matrix. In this study, Tm-doped SnS2 powders (SnS2:Tm) with optically active rare-earth centers were synthesized under pressures up to 8–9 GPa and temperatures up to 1600 °C. The synthesized powders consisted of platy particles containing Sn, S, and Tm. Powder X-ray diffraction and Raman spectroscopy confirmed the crystallization of SnS2:Tm with lattice parameters and phonon modes close to those of undoped hexagonal SnS2. Photoluminescent measurements of SnS2:Tm exfoliated flakes revealed sharp emission lines from intra-center transitions 3F2,3 → 3H6 and 3H4 → 3H6 of Tm3+. The Stark splitting of these luminescence lines reflects the local D3d crystal-field environment of Tm3+ ions. The results obtained demonstrate that 2H-transition metal dichalcogenide lattices can serve as a matrix for rare-earth ions, combining a wide variety of structural and electrical properties of 2D materials with well-studied optical transitions in lanthanide ions.
- Добавил в систему: Шестаков Михаил Викторович