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Ultrafast All‐Optical Terahertz Switchable Modulation Using Van Der Waals Fe<sub>4</sub>GeTe<sub>2</sub>/Bi<sub>2</sub>Te<sub>3</sub> Heterostructuresстатья Исследовательская статья
Статья опубликована в высокорейтинговом журнале
Статья опубликована в журнале из списка Web of Science и/или Scopus- Авторы: Zuanming Jin, Hong Huixiang, Sun Yun, Li Zhangshun, Li Jing, Peng Jingyi, Nie Tianxiao, Peng Yan, Zhang Chao, Balakin Alexei V., Shkurinov Alexander P., Zhu Yiming, Zhuang Songlin
- Журнал: Advanced Optical Materials
- Год издания: 2025
- DOI: 10.1002/adom.202500951
- Аннотация: 2D all-van der Waals FenGeTe2/topological insulator heterostructures present compelling prospects for the development of advanced opto-spintronic devices, attributed to the coupling between ferromagnetic and topological characteristics. The ultrafast laser-induced terahertz (THz) switchable modulations in Fe4GeTe2/Bi2Te3 heterostructures are investigated by employing optical pump-THz probe (OPTP) spectroscopy. By comparing the OPTP results of Fe4 GeTe2 /Bi2 Te3 with those obtained from single Fe4 GeTe2 and Bi2Te3 films, it is found that the optically-induced THz modulation is attributed to both interface carrier accumulation and thermal effect in Fe4GeTe2. Furthermore, the thickness- and temperature-dependent measurements enable the establish comprehensive rules governing the switching of photoconductivity from positive to negative. The findings highlight a promising pathway for optically controlled THz modulators, achieved by modulating charge dynamics at temperatures near the topological-to-trivial transition in all- van der Waals ferromagnetic Fe4GeTe2/topological insulator heterostructures.
- Добавил в систему: Балакин Алексей Вячеславович
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