|
ИСТИНА |
Войти в систему Регистрация |
ИСТИНА ПсковГУ |
||
Subangstrom ion beam engineering of buried ultrathin oxides for scalable quantum computingстатья
Статья опубликована в высокорейтинговом журнале
Статья опубликована в журнале из списка Web of Science и/или Scopus- Авторы: Smirnov Nikita S., Krivko Elizaveta A., Moskaleva Daria A., Moskalev Dmitry O., Solovieva Anastasia A., Matanin Aleksei R., Echeistov Vladimir V., Ivanov Аnton I., Malevannaya Elizaveta I., Polozov Viktor I., Zikiy Evgeny V., Korshakov Nikita D., Teleganov Maksim I., Mikhalin Dmitry A., Zhitkov Nikolai M., Romashkin Ruslan V., Korobenko Igor S., Yanilkin Aleksei V., Lebedev Аndrey V., Ryzhikov Ilya A., Andriyash Aleksander V., Rodionov Ilya A.
- Журнал: Science Advances
- Том: 11
- Номер: 19
- Год издания: 2025
- DOI: 10.1126/sciadv.ads9744
- Аннотация: Multilayer nanoscale systems incorporating ultrathin tunnel barriers, magnetic materials, amorphous oxides, and promising dielectrics are essential for next-generation logics, memory, quantum, and neuro-inspired computing. Still, an ultrathin film control at the atomic scale remains challenging. Here, we introduce a complementary metal-oxide semiconductor–compatible approach using focused ion beam irradiation for buried ultrathin films’ engineering with subangstrom thickness control. Molecular dynamics simulations confirm the pivotal role of ion-induced crystal defects. Its performance is exemplified by Josephson junction resistance tuning in the range of 2 to 37% with a 0.86% standard deviation in completed chips. Furthermore, it enables ±17-megahertz frequency accuracy (±0.172 angstrom tunnel barrier thickness variation) in superconducting multiqubit processors, as well as qubit energy relaxation and echo coherence times exceeding 0.5 milliseconds.
- Добавил в систему: Лебедев Андрей Владимирович