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Effect of substrate orientation on homoepitaxial β-Ga2O3 films grown by HVPEстатья
- Авторы: Butenko PN, Pechnikov AI, Boiko ME, Guzilova LI, Krymov VM, Shapenkov SV, Sharkov MD, Soshnikov IP, Nikolaev VI
- Журнал: Materialia
- Том: 102415
- Год издания: 2025
- Издательство: Elsevier Ltd
- Местоположение издательства: London
- DOI: 10.1016/j.mtla.2025.102415
- Аннотация: Gallium oxide is a promising ultra-wide bandgap (UWBG) transparent oxide semiconductor. It is currently being intensively tested for power electronics devices.Epitaxial growth is mainly utilized for their fabrication. The substrate orientation plays a key role in this process, since the monoclinic low symmetrical gallium oxide phase is highly anisotropic in its physical properties.We report homoepitaxial β-Ga2O3 layers, that were grown by HVPE on the native substrates of the (100) and the (¯201) orientations for the first time. The structural properties of thesefilms are compared with the ones grown on conventional (010) oriented substrates. Acquired layers are single-phase and monocrystalline, but they differ significantly in crystal perfection, homogeneity of chemical composition and surface roughness. The highest growth rate has been achieved on the (¯201) plane,whichdemonstratesthe potential of this orientation in device structures.
- Добавил в систему: Бойко Михаил Евгеньевич