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Reactive Radical Etching of Quartz by Microwave Activated CH<sub>4</sub>/H<sub>2</sub> Plasmas Promotes Gas Phase Nanoparticle Formationстатья
- Авторы: Ashfold Michael N.R., Curchod Basile F.E., Hollas Daniel, Ma Jie, Mankelevich Yuri A.
- Журнал: The Journal of Physical Chemistry A: Molecules, Clusters, and Aerosols
- Том: 128
- Номер: 50
- Год издания: 2024
- Издательство: American Chemical Society
- Местоположение издательства: United States
- Первая страница: 10884
- Последняя страница: 10905
- DOI: 10.1021/acs.jpca.4c05787
- Аннотация: An attenuation of visible probe radiation identifiedin earlier absorption studies of microwave plasma-activated CH4/H2/Ar gas mixtures is shown to arise from nanoparticles in underpumpedregions on opposing sides of a reactor used for diamondchemical vapor deposition. The present modeling studies highlight(i) ejection of Si-containing species into the gas phase by reactiveradical etching of the quartz window through which the microwaveradiation enters the reactor, enabled by suitably high windowtemperatures (TSiO2) and the synergistic action of near-window Hatoms and CyHx radicals; (ii) subsequent processing of the ejectedmaterial, some of which are transported to and accumulate in stagnation regions in the entrance to the reactor side arms; and (iii)the importance of Si in facilitating homogeneous gas phase nucleation, clustering, and nanoparticle growth in these regions. Theobserved attenuation, its probe wavelength dependence, and its variations with changes in process conditions can all be rationalizedby a combination of absorption and scattering contributions from Si/C/H containing nanoparticles with diameters d in the range of50−100 nm. Possible implications for Si incorporation in CVD diamond samples are discussed.
- Добавил в систему: Манкелевич Юрий Александрович