Transformation of the Fermi surface and anisotropy phenomena in 2D hole gas at GaAs/AlxGa1-xAs heterointerface under uniaxial stressстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:By numerical calculation the Fermi surface of two-dimensional (2D) holes at p-GaAs/AlxGa1−xAs heterointerface is found to become strongly anisotropic under the application of in-plane uniaxial compression. This uniaxial stress-induced anisotropy of the energy spectrum reveals in more that two times increase of 2D hole mobility anisotropy (at uniaxial compression about 5 kbar), that is experimentally detected in such heterostructures. It leads also to considerable anisotropy of far-infrared absorption spectrum; absorption of light with polarization perpendicular to the direction of compression is smaller that the absorption of light with polarization parallel to the direction of compression.