Two-dimensional electrons at the n-GaAs/Al xGa1-xAs heterointerface under uniaxial compressionстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The transport characteristics and quantum oscillations of magnetoresistance have been studied in n-(001)GaAs/AlxGa1−xAs heterostructures at liquid helium temperatures and uniaxial compressions up to 3.5 kbar. Under such loading conditions, the density of two-dimensional (2D) electrons at the heterointerface is determined primarily by a piezoelectric field induced in the [001] direction. The screening of this field leads to an increase in the 2D electron density at the heterointerface under compression along the [110] axis and to a decrease in this density, under compression along the [110] axis. The formation and subsequent redistribution of a compensating charge at the heterointerface are impeded, which leads to the development of relaxation processes in the stressed system at sufficiently high pressures. The pressure dependences of the anisotropic mobility and the effective cyclotron mass of 2D electrons show that their energy spectrum remains isotropic and the dispersion obeys a parabolic law in the pressure range studied.