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Optical and electrophysical anisotropy in amorphous silicon films irradiated with femtosecond laser pulsesтезисы доклада
- Авторы: Zabotnov S., Shuleiko D., Martyshov M., Kuzmin E., Pakholchuk P., Volkovoynova L., Serdobintsev A., Kashkarov P.
- Сборник: Book of abstracts The 31st International Conference on Advanced Laser Technologies
- Тезисы
- Год издания: 2024
- Место издания: Владивосток
- Первая страница: 274
- Аннотация: Advanced technologies of photonics and microelectronics allow designing compact planar elements for integrated optics and integrated photonic circuits based on silicon. Femtosecond laser pulses irradiation of thin silicon films might change their phase states (amorphous or crystalline) and provide surface texturing via fabrication of laser-induced periodic surface structures (LIPSSs) with micron and even submicron periods. Such structures can be considered as metasurfaces with artificial anisotropy. In our work, we fabricated large area LIPSSs (up to 5x5 mm2) in the amorphous silicon thin films and studied reflectance spectra in the infrared range at various incident light polarizations for the irradiated films as well as carried out conductivity measurements in plane of the samples along and orthogonally LIPSSs.
- Добавил в систему: Заботнов Станислав Васильевич