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Enabling Defect Control or Polyiodide Formation Regimes in Halide Perovskitesстатья
- Авторы: Grishko Aleksei Iu, Shneiderman Aleksandra A., Maksimov Eugene G., Eliseev Andrei A.
- Журнал: Materials Chemistry and Physics
- Том: 329
- Год издания: 2024
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Номер статьи: 129978
- DOI: 10.1016/j.matchemphys.2024.129978
- Аннотация: Defect engineering in oxide materials is typically achieved through manipulation of oxygen pressure and temperature, followed by quenching which freezes the concentration of point defects. Unlike oxides, halide perovskites equilibrate with gaseous atmosphere at room temperature. Information on defect engineering in halide perovskites that utilize the concentration of gaseous species is scarce and controversial. In this report we address this controversy by studying the interaction of MAPbI3 with molecular iodine over a wide range of partial pressures and reveal the two regimes of such interaction: defect control regime and polyiodide formation regime switching at ∼20% of the saturated iodine pressure. In defect control regime the material undergoes reversible changes in semiconductor properties, while in polyiodide formation regime the material undergoes irreversible changes in crystallinity and microstructure. These findings emphasize the manifold role of molecular iodine for this class of materials and provides researchers with the experimental framework that can be utilized to tune stoichiometry and conductivity of halide perovskites to further enhance the performance and stability metrics of the corresponding devices.
- Добавил в систему: Шнейдерман Александра Анатольевна