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Impact on the subsurface layers of the single-crystal β-Ga2O3 wafers induced by a mechanical wearстатья
Статья опубликована в высокорейтинговом журнале
Статья опубликована в журнале из списка Web of Science и/или Scopus- Авторы: Butenko P.N., Guzilova L.I., Chikiryaka A.V., Boiko M.E., Almaev A.V., Sharkov M.D., Nikolaev V.I.
- Журнал: Materials Science in Semiconductor Processing
- Том: 143
- Номер: 106520
- Год издания: 2022
- Издательство: Elsevier Ltd.
- Местоположение издательства: Amsterdam, Netherlands
- DOI: 10.1016/j.mssp.2022.106520
- Аннотация: The tribological experiment applied to the gallium oxide wafer led to changes in its structure which can reduce the single crystal perfection. The effect of mechanical wear on the subsurface layers of the β-Ga2O3 single crystal wafers applied to the plane is studied. A decrease in crystallinity within a mosaic structure appearing in the worn samples is revealed with a help of ω-scan analysis, performed by XRD. SEM analysis of the wear track relief of the worn samples showed an emergence of the lamellas framed by domain walls as a result of single crystal splitting.
- Добавил в систему: Бойко Михаил Евгеньевич