Single-electron reservoir network based on single impurity atoms in silicon

Авторы: Andreeva A.S., Korovnikov S.A., Sapkov I.V., Presnov D.E., Trifonov A.S., Shorokhov V.V., Snigirev O.V., Krupenin V.A.
Сборник: Micro- and Nanoelectronics - 2023
Год издания: 2023
Издательство: ООО "МАКС Пресс"
Местоположение издательства: Москва
Первая страница: 16
Последняя страница: 16
Номер статьи: O1-04
DOI: 10.29003/m3563.icmne-2023
Аннотация: In this work we studied the electron transport features in a single-electron reservoir network based on impurity arsenic atoms in silicon. A main singularity of the proposed method for forming a reservoir network is the use of a disordered distribution of impurity atoms in a quasi-two-dimensional near-surface layer of a solid-state matrix based on silicon-on-insulator (SOI) material. The reservoir was a doped region 300 nm in diameter. This region was surrounded by a system of eight tunneling Ti electrodes ~50 nm wide and 15 nm thick. Single-electron transport in the reservoir network was achieved by the separation of impurity centers during the fabrication process.
Добавил в систему: Преснов Денис Евгеньевич

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