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Temperature and deformation dependence of p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode wavelength and polarizationстатья
- Авторы: Bogdanov E.V., Minina N.Ya
- Журнал: JJAP Conf. Proc
- Том: 6
- Год издания: 2017
- Первая страница: 011105-1
- Последняя страница: 011105-5
- DOI: 10.7567/JJAPCP.6.011105
- Аннотация: Numerical calculations of the optical energy gap and the optical gains of TE and TM polarization modes in p-AlxGa1-xAs/GaAs0.84P0.16/n-AlxGa1-xAs laser diode structure are carried out for uniaxial compression up to P = 10 kbar along in-plane and normal to a heterostructure directions at temperature interval 77 K – 300 K. The optical energy gap shift under compression is substantially anisotropic and does not change significantly between 77 K and 300 K. The ratio of the optical gains of TM and TE polarization modes is also almost insensitive to the temperature but demonstrates several times decrease under in-plane compression and no change under compression normal to a heterostructure.
- Добавил в систему: Богданов Евгений Владимирович