Аннотация:Exchange-biased ferromagnet (F)/antiferromagnet (AF) structures are of great interest due to their application in spintronic devices such as spin diodes based on the giant magnetic resistance effect. In the past few years, due to the discovery of the spin Hall effect in metallic AFs and spin transfer in some AFs, studies of the dynamics of magnetization in two-layer F/AF structures have again aroused interest. Hear, the temperature dependence of the ferromagnetic resonance linewidth and the resonance field in two-layer Co/FeMn and Co/IrMn structures with an exchange bias have been studied. We present the results of studying the dynamics of magnetization by the ferromagnetic resonance (FMR) method in these binary structures The main features of the dynamics of magnetization in F/AF samples at low temperatures are a decrease in the resonance field and a broadening of the FMR line, which characterizes the damping coefficient of spin precession.It is shown that the free F-layer is characterized by a slight decrease in the resonance field by 25 Oe as the temperature decreases from 300 K to 115 K. At room temperature, the Co/IrMn and Co/FeMn samples are characterized by higher resonance fields than the free layer. As the temperature decreases, a sharp decrease in the resonance field is observed in the Co/IrMn sample, which is characterized by an insignificant anisotropy along and perpendicular to the easy magnetisation axis (EMA) of the sample. In the Co/FeMn sample, a sharply anisotropic temperature dependence of the resonant field is observed: in the direction along the field applied during the deposition of the sample, an insignificant decrease in the resonant field is observed with decreasing temperature, while in the antiparallel direction, a significant increase in the resonant field is observed. It was observed that at room temperature, the width of the FMR line for the Co/IrMn and Co/FeMn samples is greater than for the free F layer, which may be a manifestation of negative rotational anisotropy [1]. With decreasing temperature, broadening of the FMR line is observed both for the free F layer and for the F/AF structures. In contrast to the shift of the resonant field, the broadening is isotropic over the entire temperature range studied, except for a temperature of 115 K, at which an anisotropy of the FMR linewidth is observed for the free Co layer and the Co/FeMn sample, which is explained in terms of the two-magnon scattering mechanism on structural defects of the F layer and small domains of the AF layer at the interface between the layers [2], the influence of which becomes more significant at low temperatures due to a decrease in surface anisotropy [3].The temperature dependence of the magnetization dynamics of the free layer is described in terms of the slow relaxation process [4], while the additional contribution to the broadening of the FMR line and the shift of the resonant field for F/AF structures with decreasing temperature is caused by a combination of mechanisms for the inclusion of small grains and the mosaic structure of the AF structure