Ultrafast vibronic phase transitions induced in semiconductors by femtosecond laser pulsesстатья
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Дата последнего поиска статьи во внешних источниках: 29 ноября 2013 г.
Аннотация:The intermode anharmonic interaction in the theory of ultrafast (t∼10−13 s) vibronic phase transitions induced on semiconductor surfaces (Si, GaAs) by femtosecond laser pulses is calculated. The conditions for plasma-induced transitions either to a state of chaotic disorder in the positions of the atoms (“cold liquid”) or into a state with crystal symmetry different from the initial symmetry (a new crystalline phase) are determined. It is shown that a NaCl-type structure is realized in GaAs for a transition of the second type, the transition being due to the instability of the longitudinal optical phonon branch. The corresponding numerical estimates are made for Si and GaAs