Effect of heterovalent substitution on the electrical and optical properties of ZnO(M) thin films (M = Ga, In)статья
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Дата последнего поиска статьи во внешних источниках: 18 марта 2017 г.
Аннотация:Films of undoped ZnO and zinc oxide doped with gallium and indium (ZnO(Ga) and ZnO(In)) have been prepared by the spin-coating method with the subsequent annealing at 500°C. Phase composition, microstructure, conductivity, and optical properties of the films have been investigated depending on the content of gallium and indium in them.