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Real space imaging of the microscopic origins of the ultrahigh dielectric constant in polycrystalline CaCu3Ti4O12статья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Kalinin S.V., Shin J., Veith G.M., Baddorf A.P., Lobanov M.V., Runge H., Greenblatt M.
- Журнал: Applied Physics Letters
- Том: 86
- Номер: 10
- Год издания: 2005
- Издательство: AIP Publishing
- Местоположение издательства: United States
- Первая страница: 102902
- DOI: 10.1063/1.1880432
- Аннотация: The origins of an ultrahigh dielectric constant in polycrystalline CaCU3Ti4O12 (CCTO) were studied using the combination of impedance spectroscopy, electron microscopy, and scanning probe microscopy (SPM). Impedance spectra indicate that the transport properties in the 0.1 Hz - 1 MHz frequency range are dominated by a single parallel resistive-capacitive (RC) element with a characteristic relaxation frequency of 16 Hz. dc potential distributions measurements by SPM illustrate that significant potential drops. occur at the grain boundaries, which thus can be unambiguously identified as the dominant RC element. High frequency ac amplitude and phase distributions illustrate very weak grain boundary contrast in SPM, indicative of strong capacitive coupling across the interfaces. These results demonstrate that the ultrahigh dielectric constant reported for polycrystalline CCTO materials is related to grain-boundary behavior. (c) 2005 American Institute of Physics.
- Добавил в систему: Лобанов Максим Владимирович