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Terahertz wave generation from epitaxial low-temperature-grown InGaAs films on InP (100) and (411)A substratesтезисы доклада Тезисы
- Авторы: Galiev G.B., Klimov E.А., Klochkov A.N., Pushkarev S.S., Kuznetsov K.A., Kornienko V.V., Kitaeva G.Kh
- Сборник: 24-th International Symposium Nanostructures: Physics and technology
- Тезисы
- Год издания: 2016
- Место издания: St. Petersburg
- Первая страница: 221
- Последняя страница: 222
- Аннотация: The low-temperature growth (LTG) of the InGaAs layers on InP substrates with crystallographic orientations (100) and (411)A by means of molecular beam epitaxy is reported. The surface morphology and crystalline structural quality of the structures were shown to depend strongly on the InP substrate orientation and arsenic beam overpressure during epitaxial growth. The THz wave generation by the samples under the femtosecond laser excitation was investigated by the terahertz time-domain spectroscopy. It is found that the THz wave generation is 3 times more effective in the case of (411)A InP substrates as compared to the (100) substrates.
- Добавил в систему: Кузнецов Кирилл Андреевич
Прикрепленные файлы
| № | Имя | Описание | Имя файла | Размер | Добавлен |
|---|---|---|---|---|---|
| 1. | Полный текст | Thesis_SP_Nano_2016.pdf | 576,0 КБ | 5 декабря 2016 [Kirill_Kuznetsov] |