Comparison of Polythophene Memistor Devices Manufactured by Layering and Centrifugal Methodsстатья
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Дата последнего поиска статьи во внешних источниках: 11 ноября 2020 г.
Аннотация:The main characteristics of memristive elements based on polythiophene made by LangmuirSchaefer and spin-coating methods have been compared. The stability of the elements for more than500 cycles of electric rewriting for both methods has been demonstrated. It has been shown that the elementsmade by spin-coating method have slower switching kinetics, which, presumably, is associated with relativelyhigher homogeneity of the film surface. This research may be useful for the development of polythiophenememristive devices with reproducible stable characteristics suitable for various applications: from memoryelements to wearable and implantable electronics, and neuromorphic computing systems.