Acoustic instability in narrow-gap semiconductors with a nonequilibrium plasma under auger recombination conditionsстатья
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Дата последнего поиска статьи во внешних источниках: 8 января 2021 г.
Аннотация:A theory of acoustic instability is formulated for narrow-gap semiconductors of the PbSnTe type with a nonequilibrium plasma, where the instability mechanism is associated with the dependence of Auger recombination on the parameters of the semiconductor band structure and is unrelated to any kind of phenomena involving the spatial motion of quasiparticles. The growth rates of longitudinal and transverse acoustic fluctuations are calculated, along with the threshold of instability and interval of wave vectors for which the growth rates are positive. It is shown that the development of instability in narrow-gap semiconductors is limited by impact ionization effects.