Resonant amplification of sound near the spontaneous oscillation threshould of a semiconductors under impurity and interband breakdown conditionsстатья
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Дата последнего поиска статьи во внешних источниках: 8 января 2021 г.
Аннотация:An analysis is made of the problem of using self-oscillatory or potentially self-oscillatory semiconductor systems for the amplification of sound. Attention is specifically given to the possibility of resonant amplification of sound in the case when a semiconductor is close to the point of instability resulting in generation of homogeneous spontaneous oscillations associated with impurity or interband electric breakdown.