New peculiarities of interband tunneling in broken-gap heterostructuresстатья
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Дата последнего поиска статьи во внешних источниках: 17 июля 2020 г.
Аннотация:Исследовано спин-зависимое резонансное туннелирование в структурах с квантовой ямой InAs/GaSb.
We investigate the interband tunneling processes in a new type of heterostructures (broken-gap heterostructures) made from InAs, AlSb, and GaSb. Both the single-barrier and double-barrier structures are considered with the lattice mismatched strain taken into account. It is found that strain and bulk anisotropy of quasiparticle dispersions can result in additional peaks of the tunneling probability. The current-voltage (I-V) characteristics show strong dependence on the lattice-mismatched strain.
This work was financially supported by the Russian Foundation for Basic Research under grant No. 03-02-16788 а А. А. Захаровой (руководитель).