Perturbative regime of terahertz high-harmonics generation in topological insulators

Авторы: Kovalev S.P., Deinert J.C., Ilyakov I., Awari N., Chen M., Ponomaryov A., Bawatna M., de Oliveira T.V.A.G, Eng L.M., Kuznetsov K.A., Kitaeva G.Kh, Kuznetsov P.I., Gensch M.
Журнал: ArXiv e-prints
Номер: 2006.03948
Год издания: 2020
Первая страница: 1
Последняя страница: 6
Аннотация: In this Letter, terahertz high harmonic generation processes in topological insulators of the bismuth and antimony chalcogenides family are investigated. Field conversion efficiencies are determined and clean cubic and quintic power-law scaling is observed for third and fifth harmonics, up to driving terahertz fields of 140 kV/cm. This is in contrast to all previous experiments on terahertz harmonics generation in Dirac materials where a non-perturbative regime has been observed already at few 10s kV/cm driving fields. Our nonlinear THz spectroscopy experiments are complemented by THz pump - optical probe measurements showing distinctly different relaxation dynamics of the carriers in the topologically-protected Dirac states at the surfaces and the bulk. The THz-induced dynamics of surface states reveal ultrafast relaxation that prevents accumulation effects, and results in a clear perturbative regime of THz harmonics generation that is different to graphene or Dirac semimetals with their slower relaxation times in the few ps regime.
Добавил в систему: Кузнецов Кирилл Андреевич

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