Аннотация:The thin 50 nm film of bundled arc-discharge single-wall carbon nanotubes was irradiated by femtosecond laser pulses with wavelengths 675, 1350 and 1745 nm corresponding to the absorption band of metallic nanotubes E-11(M), to the background absorption and to the absorption band of semiconducting nanotubes E-11(S), respectively. The aim was to induce a selective removal of nanotubes of specific type from the bundled material. Similar to conducted thermal heating experiments, the effect of laser irradiation results in suppression of all radial breathing modes in the Raman spectra, with preferential destruction of the metallic nanotubes with diameters less than 1.26 nm and of the semiconducting nanotubes with diameters 1.36 nm. However, the etching rate of different nanotubes depends on the wavelength of the laser irradiation. It is demonstrated that the relative content of nanotubes of different chiralities can be tuned by a resonant laser ablation of undesired nanotube fraction. The preferential etching of the resonant nanotubes has been shown for laser wavelengths 675 nm (E-11(M)) and 1745 nm (E-11(S)).
