Avalanche ’edge’ injection of electrons in silicon MOS structuresстатья
Информация о цитировании статьи получена из
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 9 июня 2016 г.
Местоположение издательства:New York, N.Y., United States
Первая страница:67
Последняя страница:70
Аннотация:The effect of nonuniform avalanche injection of electrons from Si into SiO2 on the threshold avalanche voltage, the generation of surface states, and surface generation has been investigated. It is shown that when the avalanche process in MOS structures is examined, and also when avalanche-type photodetectors are developed, it is important to take into account the fact that the use of a material in which the concentration of the acceptor impurity is less than or of the order of 1016 cm-3 will unavoidably lead to complications due to the nonuniform distribution of the avalanche current over the area of the MOS structure.