Аннотация:Computer simulation of light scattering from features on plane interfaces is of interest in the
semiconductor and nanoelectronic industry. Submicrometer defects on silicon substrates are detected and
characterized by in-line laser scanning surface inspection systems. A reliable computer model for
predicting this light scattering would provide a flexible and efficient tool for efficient surface features detection and discrimination. Based on the Discrete Sources Method (DSM) a new fictitious particle concept has been elaborated and realized. Based on this conception an updated DSM computer model enables to analyze light scattering from line defects of a plane silicon substrate such as a line bump and a pit. Computer simulation results corresponding to the Scattering Cross-Section (SCS) for P/S polarized excitation are presented. It was found that the Total Scattering Cross-Section (TSC) can be change by an order of magnitude depending on the orientation of the linear feature with respect to the plane wave incident direction.