STRONG SCATTERING OF LIGHT IN SILICON NANOWIRES FORMED BY METAL-ASSISTED CHEMICAL ETCHING

Авторы: EFIMOVA A., TKACHEV A., ELISEEV A., PRESNOV D., TIMOSHENKO V., NYCHYPORUK T., RYABCHIKOV YU
Сборник: Proceedings of international conference Nanomeeting-2015. Physics, chemistry and application of nanostructures. Reviews and short notes
Глава в коллективной монографии
Год издания: 2015
Издательство: WORLD SCIENTIFIC PUBL CO PTE LTD
Местоположение издательства: 5 TOH TUCK LINK, SINGAPORE,SINGAPORE, 596224
Первая страница: 51
Последняя страница: 54
Аннотация: Layers of silicon nanowires (SiNWs) formed by metal-assisted chemical etching of low boron doped monocrystalline silicon (c-Si) substrates were investigated by means of the optical spectroscopy of reflection/absorption in visible and near-infrared regions. The total reflection of SiNW layers with thickness above 1 m was significantly lower than that of с-Si wafer for the spectral region above the band gap of c-Si, while it was comparable or even higher than the c-Si reflection in the near-infrared range below the band gap. An approximation of the diffusive propagation of light was found to be applicable to explain the near-infrared spectra of SiNWs.
Добавил в систему: Ефимова Александра Ивановна

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