ИСТИНА

SUBSTANCE: claimed invention relates to the field of materials science, namely to methods for producing two-layer structures consisting of a light-absorbing layer of a halide semiconductor of the composition of ABX3 and contacting layer of electrically conductive material layer, for use as a component of photoelectric devices, particularly solid-state devices, including thin-film, flexible or tandem solar cells, as well as optoelectronic and light-emitting devices. Method includes formation on carrier substrate of uniform layer-M of precursor of component B, on top of which there formed or applied is pre-formed uniform layer-N, containing electroconductive component D or precursor thereof, and reaction components AX or mixture of AX and X2. Then the layers are held for a period of time ensuring the complete reaction between the precursor of component B and reaction components of layer-N to form a layer of the target compound ABX3, resulting in a double-layer light-absorbing electroconductive structure. Said double-layer light-absorbing electroconductive structure comprises a layer of light-absorbing material of composition ABX3, comprising component A in form of singly-charged cation A+, selected from methyl ammonium CH3NH3+, formamidinium (NH2)2CH+, guanidinium C(NH2)3+, Cs+, Rb+ and mixtures thereof, component B in form of a polyvalent cation selected from Pb, Sn, Bi and mixtures thereof, and component X in form of singly-charged anion X-, selected from Cl-, Br-, I-, and adjacent to it electroconductive layer containing electroconductive component D. EFFECT: enabling the creation of a simple, efficient and environmentally friendly method of forming bilayer structures with simultaneous formation of a layer of ABX3 and transport (electron-/hole-conducting) layer, which enables to achieve mutual penetration of materials in the interface area of layers, providing increased area of effective contact