ИСТИНА

Abstract: We report on technological methods for fabrication and investigation of the following nanoelectronic structures from silicon-on-insulator (SOI): - high sensitive field/charge sensors based on single electron transistor (SET) from high doped silicon including transistor where the effective island is a single As dopant atom, - high sensitive field/charge sensors based on field effect transistor with nanowire channel (FET). We made a deep analysis of implementation of the SOI-based devices in physical, chemical, biological and medical applications.