ИСТИНА

Applications of inductively coupled discharges in microelectronics include film deposition and etching of semiconductors and metals. At present, the possibility of using inductively coupled discharges in the new technology of atomic layer etching is being actively studied. Considerable interest is attracted to studying inductively coupled discharges operating in the pulsed mode and elementary processes occurring in them. Therefore, the development of models of such reactors is on great demand [1]. The goal of this work was to develop a numerical drift-diffusion model of inductively coupled RF discharge. Special attention was paid to inhomogeneity of the gas temperature and inclusion of the gas flow. The plasma fluid equations were solved with Maxwell’s equations, heat balance equations, and the Navier-Stokes equation for the gas flow in the finite element approach. The geometry, the boundary conditions and plasma parameters were set up according to the experimental chamber in work [2], simple cylindrical chamber in work [3] and standart GEC reference cell [4]. The argon-based plasma chemistry and surface reactions were implemented. The electron density, the electron temperature, the plasma potential, the background gas temperature and the gas flow rate spatial distributions were obtained as the results of the simulation. These values were compared with experimental results [2-4]. Also the dependencies of these values on the gas flow rate were observed as well as the dependency of the gas temperature on the power deposition. It is shown that, if the gas flow and ihomogeneity of the gas temperature are taken into account, the results of simulations performed under conditions of the complicated reactor geometry [2] turn out to be closer to the experimental data. In addition, the possibility of adding RF bias voltage on the lower electrode was considered for better IEDF control. Both inductively and capacitively coupled models were integrated in one single model and some tests of such integration were carried out with the IEDF calculation in the separate kinetic model. This study was supported by the Russian Science Foundation, project no. 18-72-00155 [1] I. Adamovich, S. D. Baalrud, A. Bogaerts et al. 2017 J. Phys. D: Appl. Phys. 50 323001 [2] D. Lopaev, T. Rakhimova, A. Rakhimov et al. 2018 J. Phys. D: Appl. Phys. 51 02LT02 [3] V. Godyak, in Electron Kinetics and Applications of Glow Discharges, Ed. by U. Kortshagen and L. D. Tsendin (Plenum, New York, 1998), p. 241. [4] P. Miller, G. Hebner, K. Greenberg et al. 1995 J. Res. Nat. Inst. Stand. Technol. 100 427